Full-zone spin splitting for electrons and holes in bulk GaAs and GaSb.

نویسندگان

  • Jun-Wei Luo
  • Gabriel Bester
  • Alex Zunger
چکیده

The spin-orbit interaction-a fundamental electroweak force-is equivalent to an effective magnetic field intrinsic to crystals, leading to band spin splitting for certain k points in sufficiently low-symmetry structures. This (Dresselhaus) splitting has usually been calculated at restricted regions in the Brillouin zone via small wave vector approximations (e.g., k.p), potentially missing the "big picture." We provide a full-zone description of the Dresselhaus splitting in zinc blende semiconductors by using pseudopotentials, empirically corrected to rectify local density approximation errors by fitting GW results. In contrast to what was previous thought, we find that the largest spin splitting in the lowest conduction band and upper valence band (VB1) occurs surprisingly along the (210) direction, not the (110) direction, and that the splitting of the VB1 is comparable to that of the next two valence bands VB2 and VB3.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells

We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...

متن کامل

Spin relaxation of conduction electrons in bulk III-V semiconductors

Spin relaxation time of conduction electrons through the Elliot-Yafet, D’yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both nand p-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our ap...

متن کامل

Spin-orbit coupling in bulk GaAs

We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the spsd and sps nearest-neighbor tight-binding models. In the Γ-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs L and X valleys. These results are important to the realization of spintronic device and...

متن کامل

Description of bulk inversion asymmetry in the effective-bond-orbital model

We have extended the effective-bond-orbital model ~EBOM! method @Y. C. Chang, Phys. Rev. B 37, 8215 ~1988!# to include the effects of the bulk inversion asymmetry ~BIA! present in zinc blendes. This is accomplished without adding to the number of basis states or extending the range of interaction. We have also investigated a variant form of the EBOM proposed in the original formulation that off...

متن کامل

Spin splitting in 2D monochalcogenide semiconductors

We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystal...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 102 5  شماره 

صفحات  -

تاریخ انتشار 2009